2014年会议论文
1．An Improved 4H-SiC MESFET structure with Stepped Source Field Plate
Procedings of the 2014 International Conference on Industrial Engineering and Management Science (IEMS 2014),August 8-9,2014,Hong Kong,pp.55-58
Hujun Jia,Zhelin Sun and Xiaoyan Pei
2．具有P型板的4H-SiC MESFET
第18届全国半导体集成电路硅材料学术会议论文集，2014年6月14-15日，西安.pp：197-200
孙哲霖，裴晓延，贾护军
3．具有多凹陷源/漏漂移区的双凹栅4H-SiC MESFET
第18届全国半导体集成电路硅材料学术会议论文集，2014年6月14-15日，西安.pp：201-205
裴晓延，孙哲霖，贾护军
4．CHARACTERISTICS OF LANTHANUM ALUMINATE MULTI-STACKED FILMS BY ALD AT VARIOUS TEMPERATURES
The IEEE 12th International Conference on Solid-State and Integrated Circuit Technology,pp:945-948. October 28-31, 2014
Milton T. Richardson1，Liu Hongxia.
5．The diffusion of silicon atoms in Al2O3/ La2O3/Al2O3 /Si stack structure deposited by ALD
The 2nd International Conference on ALD Applications.pp:107. October 16-17, 2014
Xing Wang, Hong-Xia Liu, Chen-Xi Fei , Shu-Ying Yin.
6．Array deposited by ALD influence of process parameters on the characteristics of high K gate LaALo3 in nanomemter technology
The 2nd International Conference on ALD Applications.pp:106. October 16-17, 2014
Chen-Xi Fei,Hong-Xia Liu.
7．Asymptotically Optimized Subspace Pursuit for Sparse Signal Recovery
2014 IEEE International Conference on Computational Problem-solving,pp:424-427. December 5-7, 2014, Beijing,China
Yizhong Liu, Yiqi Zhuang, Zhenhai Shao, Di Jiang
8．Research on mobility variance caused by TSV-induced mechanical stress in 3D-IC
2014 15th International Conference on Electronic Packaging Technology (ICEPT), pp:1186-9, 2014
Yangyang Zhao;Hailong You; Ran Cui; Yu Zhang; Xinzhang Jia
9．A new analytical model for junctionless cylindrical surrounding-gate MOSFETs(大会邀请报告)
2014 IEEE International Conference of Electron Devices and Solid-State Circuits, 18 Jun-20 Jun 2014, Chengdu, China
Cong Li, Yiqi Zhuang, Ping Wang, Zhi Jiang and Li Zhang
10．一种用于二代导航接收机芯片的高稳定性快速数字自动增益控制电路
第18届全国半导体集成电路硅材料学术会议，2014，西安
靳刚，崔淼，庄奕琪.
11．A Numerical Analysis on the Thermal Effect in GaN Based Gunn Diode
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp:1082-1084
Yong-Hong Huang, Ying Wang, Lin-An Yang, Hui-Fang Zhai, Zhi-Zhe Wang, and Yue Hao
12．Study on the conduction mechanism of surface leakage current for AlGaN/GaN HEMTs under reverse gate bias
2014 12th International Conference on Solid-State and Integrated Circuit Technology.ICSICT 2014, p1258-1260,
Xuefeng Zheng, Shuang Fan, Di Kang, Weiwei Sun, Xiaohua Ma, Yue Hao
13．Numerical Study of 2D Electronic Fluid Instability in Field Effect Transistors at THz Frequency with an Energy-Dependent Hydrodynamic Model
56th Electronic Materials Conference.EMC 2014,pp:65-66
Kang Li, Wu Lu,Yue Hao
14．Geometrical scaling Effects in InP/InGaAs Double Heterojunction Bipolar Transistor
2014 IEEE 12th InternationalConference on Solid-State and Integrated Circuit Technology, ICSICT.October 29, 2014,Guilin,China
Min Liu, Yuming Zhang, Hongliang Lu, Yimen Zhang, Jincan Zhang, Chenghuan Li, Wei Zhou and Lifan Wu
15．The Influence of Proton Radiation on the Interface States in InPInGaAs Heterojunction Structure
2014 IEEE 12th InternationalConference on Solid-State and Integrated Circuit Technology, ICSICT.October 29, 2014,Guilin,China
Li Chenghuan, Lu Hongliang, Zhang Yuming, Zhang Yimen and Liu Min
16．A K-BAND LOW PHASE NOISE AND WIDE TUNING RANGE LC VCO
2014 IEEE 12th InternationalConference on Solid-State and Integrated Circuit Technology, ICSICT.October 29, 2014,Guilin,China
Yan Ting, Zhang Yu-Ming, Lu Hong-Liang, Zhang Yi-Men, and Wu Yue
17．K波段宽调谐低相噪LC压控振荡器的设计
第十八届全国半导体与硅材料学术会议，中国.西安，2014.6
严婷，张玉明，张义门，吕红亮，武岳
18．基于GaAs HB工艺的16-GHz静态分频器
第十八届全国半导体与硅材料学术会议，中国.西安，2014.6
刘一峰，吕红亮，张玉明，张义门，肖广兴，张金灿
19．InAs/AlSb HEMT器件栅槽腐蚀实验研究
第十八届全国半导体与硅材料学术会议，中国.西安，2014.6
罗杏，吕红亮，张义门，张玉明，张义门，崔强生，武利翻
20．质子辐照对InP/InGaAs异质结界面态的影响
第十八届全国半导体与硅材料学术会议，中国.西安，2014.6
李成欢，吕红亮，张玉明，张义门，刘敏
21．HfAlO高K栅介质P-GaAs金属氧化物半导体电容的界面特性
第十八届全国半导体与硅材料学术会议，中国.西安，2014.6
覃载阳，吕红亮，张玉明，张义门，刘琛
22．基于改善InGaP/GaAs自热效应的复合管设计
第十八届全国半导体与硅材料学术会议，中国.西安，2014.6
禹雷，吕红亮，张玉明，张义门，张金灿，刘敏
23．19.4GHz InGaP/GaAs HBT推推式结构VCO设计
第十八届全国半导体与硅材料学术会议，中国.西安，2014.6
禹雷，吕红亮，张玉明，张义门，叶桂平，张金灿
24．GaAs D触发器单粒子效应的仿真
第十八届全国半导体与硅材料学术会议，中国.西安，2014.6
周威，吕红亮，张玉明，张义门，刘敏
25．Improvement of current gain and breakdown voltage in 4H-SiC BJTs employing high-k dielectric as an interfacial layer
2014European Conference on Silicon Carbide & Related Material,21-25 Sept, 2014, Grenoble, France
Lei Yuan, Yuming Zhang, Qingwen Song, Xiaoyan Tang and Yimen Zhang
26．Raman spectra and Strain Uniformity of Epitaxial Graphene grown on SiC(000 )
2014European Conference on Silicon Carbide & Related Material, 21-25 Sept, 2014, Grenoble, France
Yanfei Hu , Hui Guo , Yuming Zhang and Yimen Zhang
27．Low pressure homoepitaxial Growth of 4H-SiC on 4°off-axis substrates
2014European Conference on Silicon Carbide & Related Material, 21-25 Sept, 2014, Grenoble, France
Jichao Hu, Yuming Zhang, Renxu Jia, Yuehu Wang and Bin Xin
28．NALSIS OF THE THERMAL RESISTANCE AND PERFORMANCE DEGRATION OF 4H-SiC PiN POWER DIODE
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology,28-31 Oct,2014 Guilin, China
Li Jia-Chang, Song Qing-Wen, Zhang Yi-Meng, Tang Xiao-Yan, Zhang Yu-Ming
29．I/AL/AU OHMIC CONTACTS TO P-TYPE 4H-SIC
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology,28-31 Oct,2014 Guilin, China
Chao Han, Yuming Zhang, Qingwen Song, Yimen Zhang, Xiaoyan Tang and Hui Guo
30．NFLUENCE OF THE THERMAL OXIDATION ON MINORITY CARRIER LIFETIME OF 6H-SiC
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology,28-31 Oct,2014 Guilin, China
Zhou Ting, Zhang Yu-Ming, Yuan Lei, Song Qing-Wen, Tang Xiao-Yan
31．tudies of growth technics and homogenous of Graphene formed on 4°off-axis 4H-Si-face SiC
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology,28-31 Oct,2014 Guilin, China
Yanfei Hu, Yuming Zhang, and Hui Guo
