2014年刊物论文

1．A 2.1-Channel Class-D Amplifier Exploited Coupling Virtual-audio-image to Enhance Stereo

IEEE Transactions on Circuits and Systems--II: Express Briefs, Vol.61,No.5,pp:324-328,2014. Lianxi Liu, Shijie Deng, Zhangming Zhu and Yintang Yang

2．CCS: A low-power capacitively charge-sharing transmitter for NoC links

IEICE ELECTRONICS EXPRESS, Vol,11, No.7, pp:20140038,2014. Liu, Yi ; Ma, Shuai; Yang, Yintang ; Zhu, Zhangming

3．A high image rejection SiGe low noise amplifier using passive notch filter

IEICE Electronics Express,11(3):20130928,2014. K. Jing, Y. Q. Zhuang

4．A stable and two-step settling digital controlled AGC loop for GNSS receiver

IEICE Electronics Express, Vol.11, No. 19, pp.1–7,2014. Jin Gang, Zhuang Yiqi, Cui, Miao, Yin Yue, Li Cong, Xiang Xin

5．A 48-dB precise decibel linear programmable gain amplifier for GNSS receivers

IEICE Electronics Express, Vol.11,No. 21, pp.1–6, 2014.Yin, Yue; Zhuang, Yiqi; Jin, Gang; Fan, Xiaoqiang; Qi, Xiaofei; Xiang, Xin

6．Improved carrier mobility of InAlN/GaN heterostructure grown on cone-shaped patterned sapphire substrate

Japanese Journal of Applied Physics, Vol.53, No.11,2014. Zhao Yi, Zhang Jincheng, Xue Junshuai, Xu Shengrui, Zhou Xiaowei, Hao Yue.

7．Effect of Substrate Doping on Threshold Voltages of Buried Channel pMOSFET based on Strained-SiGe technology

Journal of Central South University,Vol.21(6): 2292-2297,2014.Wang Bin, Zhang Heming, Zhang Yuming, Hu Huiyong, Zhang Yuming, Zhou Chunyu

8．Double-Gate Tunnel Field-Effect Transistor: Gate Threshold Voltage Modeling and Extraction

Journal of Central South University,Vol 21, No.2, pp 587-592,2014.Li Yu-Chen, Zhang He-Ming, Hu Hui-Yong, Zhang Yu-Ming, Wang Bin, Zhou Chun-Yu，

9．An “off–on” fluorescence probe for Hg(II) detection using up conversion nanobars as the excitation source: Preparation, characterization and sensing performance

Journal of Luminescence,145(2014)364–370,2014.Xiao Cui, HeMing Zhang

10．Study on the construction and performance of a Hg(II)-sensing system having an “off–on” probe derived from rhodamine and an up-conversion excitation core

Journal of Luminescence,145(2014)539–546,2014.Xiao Cui, HeMing Zhang

11．A High-Throughput VLSI Architecture Design of Arithmetic Encoder in JPEG2000

Journal of Signal Processing Systems, Vol.81, No.2, pp: 227-247,2014.Di Zhixiong, Hao Yue, Shi Jiangyi, Ma Peijun

12．The fabrication of 4H-SiC Floating Junction SBDs(FJ_SBDs)

Materials Science Forum, Vols. 778-780, pp: 812(4),2014. Yuan Hao, Tang Xiaoyan, Zhang Yimen, Zhang Yuming, Lv Hongliang, Wang Yuehu,Zhou Yufei, Song Qingwen

13．A t-chart for Monitoring Multi-variety and Small Batch Production Run.

Qual. Reliab. Engng. Int., 30: 287–299,2014. Gu, K., Jia, X., You, H. and Zhang, S.

14．A phosphorescent rhenium emitter with minimal fluorescent component induced by heavy atom: Synthetic procedure, molecular structure, photophysical feature and optoelectronic application

Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy,118 (2014) 888–896.Xiao Cui, He Ming Zhang

15．Proton irradiation effects on InGaP/GaAs single heterojunction bipolar transistors

Solid State Electronics, Vol.96, No.6,pp:9(4),2014. Min Liu, Yuming Zhang, Hongliang Lu, Yimen Zhang, Jincan Zhang, Zhichao Wei, Chenghuan Li

16．AlGaN metal-semiconductor-metal ultraviolet photodetectors on sapphire substrate with a low-temperature AlN buffer layer

CHINESE OPTICS LETTERS, Vol,10, No.11, pp:102304,2014.Junqin Zhang，Yintang Yang，Hujun Jia

17．Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

Chinese Physics B, Vol,23, No.5, pp:057305,2014. Lei XiaoYi, Liu HongXia

18．Hybrid solar cell based on polythiophene and GaN nanoparticles composite

Chinese Physics B, Vol.23, No.2, pp: 028802,2014.Feng Qian, Shi Peng, Li Yukun, Du Kai, Wang Qiang, Feng Qing, Hao Yue.

19．Improved mobility of AlGaN channel heterojunction material using an AlGaN/GaN composite buffer layer

Chinese Physics B, Vol.23, No.3, pp: 037302,2014.Wen Huijuan, Zhang Jincheng, Lu Xiaoli,Wang Zhizhe, Ha Wei, Ge Shasha, Cao Rongtao, Hao Yue.

20．High-efficiency S-band harmonic tuning GaN amplifier

Chinese Physics B, Vol.23, No.3, pp: 037305,2014.Cao Mengyi, Zhang Kai, Chen Yonghe, Zhang Jincheng, Ma Xiaohua, Hao Yue.

21．Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET

Chinese Physics B, Vol.23, No.5, pp: 057304,2014.Zhang Yue, Zhuo Qingqing, Liu Hongxia, Ma Xiaohua, Hao Yue

22．Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

Chinese Physics B, Vol.23, No.5, pp: 057305,2014.Lei Xiaoyi, Liu Hongxia, Zhang Yue, Ma Xiaohua, Hao Yue.

23．Improved crystal quality of GaN film with the in-plane lattice-matched In0.17Al0.83N interlayer grown on sapphire substrate using pulsed metal organic chemical vapor deposition

Chinese Physics B, Vol.23, No.6, pp: 067103,2014. Li Liang, Yang Linan, Xue Junshuai, Cao Rongtao, Xu Shengrui, Zhang Jincheng, Hao Yue.

24．Depth-dependent mosaic tilt and twist in GaN epilayer: An approximate evaluation

Chinese Physics B, Vol.23, No.6, pp: 068102,2014.Zhang Jinfeng, Nie Yuhu, Zhou Yongbo, Tian Kun, Ha Wei, Xiao Ming, Zhang Jincheng, Hao Yue.

25．Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

Chinese Physics B, Vol.23, No.7, pp: 077304,2014.Mi Minhan, Zhang Kai, Chen Xing, Zhao Shenglei, Wang Chong, Zhang Jincheng, Ma Xiaohua, Hao Yue.

26．Effect of alumina thickness on Al2O3/InP interface with post deposition annealing in oxygen ambient

Chinese Physics B, Vol.23, No.7, pp: 077305,2014.Yang Zhuo, Yang Jingzhi, Huang Yong, Zhang Kai, Hao Yue.

27．An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

Chinese Physics B, Vol.23, No.8, pp: 087201,2014.Cao Mengyi, Lu Yang, Wei Jiaxing, Chen Yonghe, Li Weijun, Zheng Jiaxin, Ma Xiaohua, Hao Yue.

28．A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor.

Chinese Physics B, Vol.23, No.8, pp: 087305,2014.Mao Wei, She Weibo, Yang Cui, Zhang Chao, Zhang Jincheng, Ma Xiaohua, Zhang Jinfeng, Liu Hongxia, Yang Lin'an, Zhang Kai, Zhao Shenglei, Chen Yonghe, Zheng Xuefeng, Hao Yue.

29．Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

Chinese Physics B, Vol.23, No.9, pp: 097305,2014.Zhao Shenglei, Wang Yuan, Yang Xiaolei, Lin Zhiyu, Wang Chong, Zhang Jincheng, Ma Xiaohua, Hao Yue.

30．Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

Chinese Physics B, Vol.23, No.10, pp:107303,2014.Zhao Shenglei, Mi Minhan, Hou Bin, Luo Jun, Wang Yi, Dai Yang, Zhang Jincheng, Ma Xiaohua, Hao Yue.

31．Resistive switching characteristics of Ti-ZrO2 RRAM device.

Chinese Physics B, Vol.23, No.11, pp:117305, 2014.Lei Xiaoyi, Liu Hongxia, Gao Haixia, Yang Hani, Wang Guoming, Long Shibing, Ma Xiaohua, Liu Ming.

32．总剂量辐照下沟道长度对部分耗尽绝缘体上硅P型场效应晶体管电特性的影响

物理学报, Vol,63,No.1,pp:016102,2014.刘红侠,王志,卓青青,王倩琼

33．对称三材料双栅应变硅金属氧化物半导体场效应晶体管二维解析模型

物理学报, Vol,63,No.14,pp:148502,2014.辛艳辉，刘红侠，王树龙，范小娇

34．单轴应变Si NMOSFET热载流子栅电流模型

物理学报, 63 (19): 197103,2014.吕懿、张鹤鸣、胡辉勇、杨晋勇

35．SOI SiGe HBT结构设计及频率特性研究

物理学报, 63(11): 118501,2014.宋建军，杨超，朱贺，张鹤鸣， 宣荣喜，胡辉勇，舒斌

36．应变Si n型金属氧化物半导体场效应晶体管电荷模型

物理学报, Vol.63, No.1, pp:017101(6) ,2014.周春宇 张鹤鸣 胡辉勇 庄奕琪 吕懿 王斌 王冠宇

37．热退火对Mn离子注入非故意掺杂GaN微结构、光学及磁学特性的影响

物理学报, Vol. 63, No. 4, pp.047501(6),2014.徐大庆, 张义门,娄永乐,童军

38．An analytical model of anisotropic low field electron mobility in Wurtzite Indium Nitride

Applied physics a-materials science & processing , Vol,114, No.4, pp:1113-1117,2014.Wang Shulong, Liu Hongxia, Song,Xin, Yang Zhaonian

39．Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT

Chinese Physics Letters, Vol.31, No.3, pp:038501,2014.Wang Chong, He Yunlong, Ding Ning, Zheng Xuefeng, Zhang Peng, Ma Xiaohua, Zhang Jincheng, Hao Yue.

40．Electron trap energy distribution in HfO2 by the discharge-based pulse I-V technique

Chinese Physics Letters, Vol.31, No.12, pp:120711,2014.Zheng Xuefeng, Fan Shuang, Kang Di, Zhang Jiankun, Cao Yanrong, Ma Xiaohua, Hao Yue

41．Pulsed metal organic chemical vapor deposition of InAlN-based heterostructures and its application in electronic devices

Chinese Science Bulletin, Vol.59, No.12, pp:1228-1234,2014.Hao Yue, Xue Junshuai, Zhang Jincheng.

42．A16KbSpin-Transfer Torque Random Access Memory WithSelf-Enable Switching and Precharge Sensing SchemesIEEE Transactions on Magnetics,Vol.50,No.4 ,PP:3400107,2014.LiZhang,WeishengZhao, YiqiZhuang,JunlinBao, GefeiWang,HualianTang,CongLi,and BeileiXu

43．ITO-Free Semitransparent Organic Solar Cells Based on Silver Thin Film Electrodes

International Journal of Photoenergy, pp:209206,2014. Wang Zhizhe, Zhang Chunfu, Chen Dazheng, Zhang Jincheng, Hao Yue.

44．DESIGN OF A FULLY INTEGRATED 2.4GHz FREQUENCY PLL SYNTHESIZER FOR ZIGBEE

TRANSCEIVER APPLICATION

Journal of Circuits, Systems, and Computers,Vol. 23, No. 10,1450137,2014.DI LI, YINTANG YANG, DUAN ZHOU, YANI LI and XIAOPENG WU

45．Effect of post-deposition annealing on the interfacial chemical bonding states and band alignment of atomic layer deposited neodymium oxide on silicon

Materials Research Express, Vol,1, No.4(11), pp:045005,2014.Fan Xiaojiao, Liu Hongxia, Fei Chenxi

46．Effect of post-deposition annealing on the interfacial chemical bonding states and band alignment of atomic layer deposited neodymium oxide on silicon

Materials Research Express, Vol,1, No.4(11), pp:045005,2014. Fan Xiaojiao, Liu Hongxia, Fei Chenxi

47．A fully integrated feedback AGC loop for ZigBee (IEEE 802.15.4) RF transceiver applications

Microelectronics Journal, Vol.45, Issue.6, pp: 657-665,2014.Di Li, Yin-Tang Yang, Zhan Jing, Zuo-Chen Shi, Yang Liu

48．Anisotropic Low Field Electron Diffusion Coefficient and Mobility in Wurtzite Indium Nitride

Physica status solidi (b), Vol,1, No.1, pp:168-171 ,2014.Wang, Shulong，Liu, Hongxia，Yang, Zhaonian

49．直接带隙Ge1-xSnx本征载流子浓度研究

物理学报, 63 (23): 238502,2014.白敏, 宣荣喜, 宋建军, 张鹤鸣, 胡辉勇, 舒斌

50．具有poly-Si1-xGex栅的应变SiGep型金属氧化物半导体场效应晶体管阈值电压漂移模型研究

物理学报, 63 (23): 237302,2014.刘翔宇, 胡辉勇, 张鹤鸣, 宣荣喜, 宋建军, 舒斌, 王斌, 王萌

51．γ射线总剂量辐照效应对应变Si p型金属氧化物半导体场效应晶体管阈值电压与跨导的影响研究

物理学报, 63 (23): 236102,2014.胡辉勇, 刘翔宇, 连永昌, 张鹤鸣, 宋建军, 宣荣喜, 舒斌

52．High strained silicon nitride thin film deposited by PECVD with double frequencies in strained silicon technologies

Advanced Materials Research,936255-258,2014.Shu Bin, Chen JingMing Zhang HeMing, Zhu Feng Quan Pu li, Gu JiangYuan, Xuan RongXi, Hu HuiYong, Song JianJun

53．Influence of the anisotropy on the performance of D-band SiC IMPATT diodes.

Applied Physics A: Materials Science and Processing, Vol.118,No. 4,pp: 1219-1227,2014.Chen Qing, Yang Lin'an, Wang Shulong, Zhang Yue, Dai Yang, Hao Yue.

54．Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

Chinese Physics B, Vol.23, No.5, pp: 057301,2014.Liao Xueyang, Zhang Kai, Zeng Chang, Zheng Xuefeng, En Yunfei, Lai Ping, Hao Yue.

55．71% PAE C-band GaN power amplifier using harmonic tuning technology

Electronics Letters, Vol.50, No.17,pp:1207-1208,2014. Lu Yang, Cao Mengyi, Wei Jiaxing, Zhao Bochao, Ma Xiaohua, Hao Yue.

56．Combined D-optimal design and generalized regression neural network for modeling of plasma etching rate

International Journal of Metrology and Quality Engineering, Vol.5, No.1, pp:37-41 ,2014. Hailong You, Yong Chen, Peng Liu and Xinzhang Jia

57．Strain effects on band structure of wurtzite ZnO: a GGA +U study

Journal of Semiconductors, Vol.35, No.7 pp:073004 (5) ,2014. Qiao Liping, Chai Changchun, Yang Yintang, Yu Xinhai, Shi Chunlei

58．Temperature dependence of latch-up effects in CMOS inverter induced by High Power Microwave

Journal of Semiconductors, Vol.35, No.8 pp:084011 (6) ,2014.Yu Xinhai, Chai Changchun, Ren Xingrong, Yang Yintang, Xi Xiaowen, Liu Yang

59．A High Gain Wide Dynamic Range Transimpedance Amplifier for Optical Receivers

Journal of Semiconductors, Vol.35,No.1,pp:0150011-6,2014.Lianxi Liu, Jiao Zou, Yunfei En,Shubin Liu, Yue Niu, Zhangming Zhu, Yintang Yang

60．A power-effective 12-bit analog-to-digital converter with a novel constant-resistance CMOS input sampling switch

Journal of Semiconductors,35(2):025002-1,2014.Jing Xin,Zhuang Yiqi,Tang Hualian,Dai Li,Du Yongqian,Zhang Li,Duan Hongbo

61．Ka-band full-360 analog phase shifter with low insertion loss

Journal of Semiconductors, Vol.35, No.10, ,2014.Cao Mengyi, Lu Yang, Wei Jiaxing, Zheng Jiaxin, Ma Xiaohua, Hao Yue.

62．A 6-bit 3-Gsps ADC implemented in 1μm GaAs HBT technology

Journal of Semiconductors, Vol.35, No.8pp:085005(4),2014.Zhang Jincan, Zhang Yuming, Lv Hongliang, Zhang Yimem, Xiao Guangxing, Ye Guiping

63．A broadband regenerative frequency divider in InGaP/GaAs HBT technology

Journal of Semiconductors, Vol.35, No.7, pp：075004(4),2014.Zhang Jincan, Zhang Yuming, Lü Hongliang., Zhang Yimen, Liu Min, Zhong Yinghui, and Shi Zheng

64．Influence of oxygen content on the crystallinity of MgO layers in magnetic tunnel junctions

Journal of Semiconductors, Vol.35, No.8,pp:083005(4)2014. Lou Yongle, Zhang Yuming, Xu Daqing, Guo Hui, Zhang Yimen, and Li Yuchen

65．Study on the growth of graphene by chemical vapor deposition method

Rengong Jingti Xuebao/Journal of Synthetic Crystals, Vol.43, No.7, pp:1620-1625,2014. Shi Yonggui, Wang Dong, Zhang Jincheng, Zhang Peng, Shi Xuefang, Hao Yue.

66 Method for transforming cyclic circuits into acyclic equivalents

Xi'an Dianzi Keji Daxue Xuebao, Vol.41, No.1 pp:75-80,2014.Di Zhixiong, Shi Jiangyi, Ma Peijun, Zhang Yi, Yuan Li, Hao Yue

67．Design of the S band 6 bits high precision phase shifter.

Xi'an Dianzi Keji Daxue Xuebao, Vol.41, No.2, pp:125-129,2014.Yang Xiaofeng, Shi Jiangyi, Ma Peijun, Hao Yue.

68．一种新型双通道MOS开关栅压自举电路.

西安电子科技大学学报 , 41(3),148-154,2014.景鑫,庄奕琪,汤华莲,张丽,杜永乾

69．一种适用于自旋磁随机存储器的低压写入电路

西安电子科技大学学报, Vol.41,No.3 pp141-147,2014.张 丽,庄奕琪,赵巍胜,汤华莲