2015年会议论文
1．A Voltage Doubling AC-DC Converter with Offset-Controlled Comparators for Piezoelectric Energy Harvester
2015 IEEE 11th International Conference on ASIC, ASICON P1-43,Nov. 3-6, 2015, Chengdu,China
Lianxi Liu, Wei Tu, Junchao Mu, Zhangming Zhu, and Yintang Yang
2．Improved clival gate 4H-SiC MESFET with recessed drain drift region and recessed p-buffer layer
2015 International Conference on Electrical, Electronics and Mechatronics(ICEEM2015)，Dec.20-21, 2015， Phuket, Thailand
Hujun Jia, Peimiao Ma, Yehui Luo, Ding Xing, Hang Zhang, Zhijiao Wang and Qiuyuan Wu
3．GaAs HEMT GaAs HEMT GaAs HEMT 低噪放的高功率微波效应研究
第十届全国高功率微波学术研讨会，Aguest 25-29, 2015, 中国呼和浩特
于新海,柴常春,赵刚,杨银堂,刘阳,陈自东
4．强电磁脉冲作用下GaN HEMT损伤效应研究
第十届全国高功率微波学术研讨会，Aguest 25-29, 2015, 中国呼和浩特
刘阳，柴常春，赵刚，于新海，杨银堂，席晓文
5．Simulation study on single event effects of FinFET devices
International Conference on Radiation Effects of Electronic Devices(ICREED-2015),Oral:C4,China,Harbin
吴振宇,徐富兵,刘毅,杨银堂
6．A new analytical model for junctionless cylindrical surrounding-gate MOSFETs
2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014,
March 13,Chengdu,China
Li, Cong, Zhuang, Yiqi; Wang, Ping; Zhi, Jiang; Li, Zhang
7．Analytical modeling for double-gate TFET with tri-material gate
2014 IEEE 12th International Conference on Solid-State and Integrated Circuits Technology, ICSICT 2014,
January 23, 2014,Guilin,China
Wang Ping, Zhuang Yiqi, Li Cong, Jiang Zhi
8．High Performance of 5.7kV 4H‐SiC JBSs with Optimized non‐uniform Field Limiting Rings Termination
International Conference on Silicon Carbide and Related Materials2015.10.4~9，GiardiniNaxos，Italy.
Hao Yuan, Qingwen Song, Xiaoyan Tang, Yuming Zhang, Hui Guo, Yuehu Wang,Yimeng Zhang, Renxu Jia, Yimen Zhang
9．Study on Interface State Density of La2O3/SiO2 /4H‐SiC Stacking Gate Dielectric MOS Capacitors
International Conference on Silicon Carbide and Related Materials2015.10.4~10，GiardiniNaxos，Italy，
Yucheng Wang, Yuming Zhang, Renxu Jia
10．Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using Atomic Layer Deposition
The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors.
September 6~10, 2015.Suzhou, China
Bin Lu, Hongliang-Lv, Yuming-Zhang, Yimen-Zhang
11．Comparative Study of Atomic-Layer-Deposited HfO2/Al2O3, Hf0.8Al0.2Ox and Hf0.5Al0.5Ox on N-GaAs
The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors
September 6~10, 2015.Suzhou, China
Xinjiang Yu, Hongliang Lv, Yuming Zhang, Yimen Zhang, Zaiyang Qin
12．High Temperature Characterization of Normally-on 4H-SiC Junction Field-effect
The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors
September 6~10, 2015.Suzhou, China
Tang Meiyan, Zhang Yimeng, Song Qingwen, Tang Xiaoyan, Lu Hongliang, Liu Sicheng
13．Investigation of the Novel 4H-SiC Trench MOSFET with Non-uniform Doping Floating Island
The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors
September 6~10, 2015.Suzhou, China
Tian Ruiyan, Tang Xiaoyan, Song Qingwen, Zhang Yimeng and Guo Tao
14．Geometrical scaling Effects in InP/InGaAs Double Heterojunction Bipolar Transistor
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)
Min Liu, Yuming Zhang, Hongliang Lu, Yimen Zhang, Jincan Zhang, Chenghuan Li, Wei Zhou and Lifan Wu
15．The Influence of Proton Radiation on the Interface States in InPInGaAs Heterojunction Structure
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)
Li Chenghuan, Lu Hongliang, Zhang Yuming, Zhang Yimen and Liu Min`
16．A K-BAND LOW PHASE NOISE AND WIDE TUNING RANGE LC VCO
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)
Yan Ting, Zhang Yu-Ming, Lu Hong-Liang*, Zhang Yi-Men, and Wu Yue
17．ANALSIS OF THE THERMAL RESISTANCE AND PERFORMANCE DEGRATION OF 4H-SiC PiN POWER DIODE
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)
Li Jia-Chang, Song Qing-Wen, Zhang Yi-Meng, Tang Xiao-Yan, Zhang Yu-Ming
18．TI/AL/AU OHMIC CONTACTS TO P-TYPE 4H-SIC
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)
Chao Han, Yuming Zhang, Qingwen Song, Yimen Zhang, Xiaoyan Tang and Hui Guo
19．INFLUENCE OF THE THERMAL OXIDATION ON MINORITY CARRIER LIFETIME OF 6H-SiC
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)
Zhou Ting, Zhang Yu-Ming, Yuan Lei, Song Qing-Wen, Tang Xiao-Yan
20．4H-SiC TRENCH MOSFETS BASED ON MULTILAYER EPITAXIAL STRUCTURES
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)
Qingwen Song, Yuming Zhang, Yanjing He,Chao Han,Lei Yuan, Hao Yuan, Zhang Yimen, Xiaoyan Tang ,Hui Guo
21．Studies of growth technics and homogenous of Graphene formed on 4°off-axis 4H-Si-face SiC
2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology(ICSICT)
Yanfei Hu, Yuming Zhang, Hui Guo
22．Improved Planar MOS Barrier Schottky (PMBS) Rectifier with High-k Dielectrics
2014European Conference on Silicon Carbide & Related Materials
Qingwen Song, Yuming Zhang，Xiaoyan Tang, Yuhu Wang, Hao Yuan, and Yimen Zhang
23．Improvement of current gain and breakdown voltage in 4H-SiC BJTs employing high-k dielectric as an interfacial layer
2014European Conference on Silicon Carbide & Related Materials
Lei Yuan, Yuming Zhang, Qingwen Song, Xiaoyan Tang and Yimen Zhang
24．Raman spectra and Strain Uniformity of Epitaxial Graphene grown on SiC(0001)
2014European Conference on Silicon Carbide & Related Materials
Yanfei Hu , Hui Guo , Yuming Zhang and Yimen Zhang
25．Low pressure homoepitaxial Growth of 4H-SiC on 4°off-axis substrates
2014European Conference on Silicon Carbide & Related Materials
Jichao Hu, Yuming Zhang, Renxu Jia, Yuehu Wang and Bin Xin
26．The modulation of the domain mode in GaN-based planar Gunn diode for terahertz applications
11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing
Ying Wang, Lin-An Yang, Yang Li, and Yue Hao
27．Hyper-3D Porous Graphene for High Performance Mn3O4 Supercapacitors
The International Symposium on Physics and Device Application of Two-dimensional Materials
Jing Ning*, Dong Wang*, Jincheng Zhang, and Yue Hao
28．High performance 3D Porous Graphene for High Performance Mn3O4 Supercapacitors
第十届国际华人纳米论坛
Jing Ning*, Dong Wang*, Jincheng Zhang, and Yue Hao
29．Characterization of the b-Ga2O3 films grown by pulsed laser deposition
International workshop on Gallium oxide and Related Materials
冯倩，代波，李付国，谢文林，徐通，郝跃
30．Confinement and transport characteristics of high-density two-dimensionalelectron-gas in novel GaN-based heterostructures
11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing
Jincheng Zhang and Yue Hao
31．Effects of cabon and oxygen impurities on the optical and electrical properties of polar-, semipolar- and nonpolar GaN epilayers
16th conference on Defects-Recognition, Imaging and Physics in Semiconductors(DRIP),Sept. 2015 in Suzhou
Jincheng Zhang, Shengrui Xu, Zhiyu Lin, Jiaduo Zhu, Yue Hao
32．GaN-based novel heterostructures and electronic devices
7th Asia Pacific Workshop on Widegap Semiconductor, Seoul, Korea, May 17-20, 2015
Jincheng Zhang, Jiaduo Zhu and Yue Hao
33．Novel GaN-based heterostructure materials and HEMT devices
2015 International Symposium on Single Crystal Diamond and Electronics(SCDE 2015),June 12-13, Xi'an, China
Jincheng Zhang*, Xue Junshuai, Jiaduo Zhu, Yue Hao
34．AlGaN Channel High Electron Mobility Transistors with an AlxGa1-xN/GaN Composite Buffer Layer
11thInternational Workshop on Nitride Semiconductors(11-ICNS),Beijing, China, August 29-September 4, 2015
Xiangdong Li,Jincheng Zhang, Yu Zou, Zhenxing Guo, Weihang Zhang, Renyuan Jiang, Haiqing Jiang, Huijuan Wen, Yue Hao
35．Growth and characterization of epitaxial overgrown less-strained GaN bymonolayer silica microspheres mask
11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing
Ming Xiao, Jincheng Zhang, Jianjun Ma, Kun Tian, Rudai Quan and Yue Hao
36．Growth Of High-Quality High-Al AlGaN Material On The Three-Dimensional GaN Islands Of Defect-Free
11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing
Xiaoling Duan, Ming Xiao, Jincheng Zhang*, Jianjun Ma, Kun Tian and Yue Hao
37．Effect Of Gallium Source Flows On Morphology And Electrical Properties Of InAlGaN Barrier Layers Grown By Pulse Metal Organic Chemical Vapor Deposition
11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing
Rudai Quan, Jincheng Zhang, Junshuai Xue, Yue Hao
38．Growth Of GaN Epilayer With High Performance By Adopting Sputtered AlN Nucleation Layer And In-Situ AlN Interlayer
11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing
Zhibin Chen, Jincheng Zhang and Yue Hao
39．Growth Of High-Quality Ga-Rich AlGaN On GaN Islands Of Defect-Free
11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing
Ming Xiao, Jincheng Zhang, Xiaoling Duan and Yue Hao
40．Raman Scattering Of Polar And Nonpolar GaN Nanowires By Metal Organic Chemical Vapor Deposition
11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing
Teng Jiang, Jincheng Zhang, Shengrui Xu and Yue Hao
41．Energetics Of Oxygen Incorporation At AlN (0001) Surface With N-Type And P Type
11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing
Jiaduo Zhu, Jincheng Zhang and Yue Hao
42．Demonstration Of InAlN/AlGaN High Electron Mobility Transistors With Enhanced Breakdown Voltage and Linearity By Pulsed Metal Organic Chemical Vapor Deposition
11th International Conference on Nitride Semiconductors, August 30-September 4, 2015, Beijing
Junshuai Xue, Jincheng Zhang, and Yue Hao
43．GaN基半导体电子器件的进展与趋势（大会报告）
中国有色金属学会宽禁带半导体专业委员会首届学术研讨会,广东东莞，2015.12.11
张进成，郝跃
44．宽禁带半导体电子器件的若干进展（大会报告）
第一届全国宽禁带半导体学术与应用技术会议，2015年10月30日至11月2日.中国.苏州
张进成，郝跃
45．新型高压AlGaN 沟道器件研究新进展（特邀报告）
第一届全国宽禁带半导体学术与应用技术会议，2015年10月30日至11月2日.中国.苏州
张进成，郝跃
46．Relaxed Ge0.97Sn0.03 P-Channel Tunneling FETs with High Drive Current Fabricated on Si and Further Improvement Enabled by Uniaxial Tensile Strain
2015 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2015
Mingshan Liu, Genquan Han, Yan Liu, Chunfu Zhang, Jincheng Zhang, Xiaohua Ma, Buwen Cheng, and Yue Hao
47．Importance of growth pressure on achieving high quality InAlN/GaN heterostructures by pulsed metal organic chemical vapor deposition
The 6th International Symposium on Growth of III-Nitrides, November 8-13, 2015, Hamamatsu, Japan
Junshuai Xue, Jincheng Zhang, and Yue Hao
48．Growth and fabrication of InAlN/AlGaN high electron mobility transistors with enhanced breakdown voltage and linearity
The 6th International Symposium on Growth of III-Nitrides, November 8-13, 2015, Hamamatsu, Japan
Junshuai Xue, Jincheng Zhang, and Yue Hao
